Boundaries for the primary saddle-node bifurcations related to the main resonances in pump-modulated laser diodes are obtained via numerical simulation. The model explicitly contains the gain saturation and spontaneous emission terms and the authors focus on the effect that these terms have on the large signal modulation regime. It is found that the spontaneous emission term strongly modifies the qualitative behaviour of the instability boundaries, while the gain saturation factor manifests itself in the damping of relaxation oscillations and leads to a simple quantitative shift of boundaries.
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Zhu, Ning Hua
Shi, Zhan
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Shi, Zhan
Zhang, Zhi Ke
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Zhang, Zhi Ke
Zhang, Yi Ming
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Zhang, Yi Ming
Zou, Can Wen
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Zou, Can Wen
Zhao, Ze Ping
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Zhao, Ze Ping
Liu, Yu
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Liu, Yu
Li, Wei
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Li, Wei
Li, Ming
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Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100864, Peoples R China
机构:
UNIV CARLOS III MADRID,ESCUELA POLITECN SUPER,E-28911 LEGANES,MADRID,SPAINUNIV CARLOS III MADRID,ESCUELA POLITECN SUPER,E-28911 LEGANES,MADRID,SPAIN
Carpintero, G
Lamela, H
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UNIV CARLOS III MADRID,ESCUELA POLITECN SUPER,E-28911 LEGANES,MADRID,SPAINUNIV CARLOS III MADRID,ESCUELA POLITECN SUPER,E-28911 LEGANES,MADRID,SPAIN
Lamela, H
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV,
1996,
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: 398
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