Main resonances in directly modulated semiconductor lasers: effect of spontaneous emission and gain saturation

被引:6
|
作者
Mayol, C [1 ]
Turovets, SI
Toral, R
Mirasso, CR
Pesquera, L
机构
[1] Univ Illes Balears, Dept Fis, E-07071 Palma de Mallorca, Spain
[2] Univ Illes Balears, CSIC, IMEDEA, Inst Mediterraneo Estudios Avanzados, E-07071 Palma de Mallorca, Spain
[3] Univ Cantabria, Inst Fis Cantabria, CSIC, Fac Ciencias, E-39005 Santander, Spain
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2001年 / 148卷 / 01期
基金
澳大利亚研究理事会;
关键词
D O I
10.1049/ip-opt:20010245
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Boundaries for the primary saddle-node bifurcations related to the main resonances in pump-modulated laser diodes are obtained via numerical simulation. The model explicitly contains the gain saturation and spontaneous emission terms and the authors focus on the effect that these terms have on the large signal modulation regime. It is found that the spontaneous emission term strongly modifies the qualitative behaviour of the instability boundaries, while the gain saturation factor manifests itself in the damping of relaxation oscillations and leads to a simple quantitative shift of boundaries.
引用
收藏
页码:41 / 45
页数:5
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