In situ TEM observation of the formation of nickel nanocrystals in Ni-implanted amorphous SiO2 thin films

被引：1
|
作者：
Jiang, CZ [1 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 14期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1023/A:1010915004750
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of nickel nanocrystals in nickel-implanted amorphous silica thin films was studied using in situ transmission electron microscopy. The effects of ion dose, beam current density, substrate temperature and annealing temperature on average sizes, size distributions and number density of nanocrystals were analyzed. Experimental results indicate that the properties of thin films can be controlled by varying these effects on nanocrystals.
引用
收藏
页码：1335 / 1337
页数：3
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