High stability of silica-wrapped CsPbBr3 perovskite quantum dots for light emitting application

Encapsulating quantum dots (QDs) into other medium has been considered as an efficacious method to avoid the fluorescence degradation of QDs. Here, we proposed a facile method to embed CsPbBr3 perovskite QDs in silica matrix derived from (3-aminopropyl)triethoxysilane (APTES) at room temperature in open air. The QDs/SiO2 composite was extracted from the sol-gel solution by using a precipitation-encapsulation method assisted with APTES. As-prepared composite powder possess a high photoluminescence quantum yield (PLQY) of 68% and a full width at half maximum (FWHM) of similar to 23 nm. The QDs/SiO2 compounds show excellent stability after the five heating cycles (105 degrees C) and a continuous xenon irradiation (500 W, 70 degrees C). Besides, the products remain 94.3% and 98.6% photoluminescence (PL) intensity after 30 days of storage (25 degrees C) and 96 h of ultraviolet (UV) irradiation (lambda = 365 nm) respectively. The white light-emitting diode (LED) was fabricated by coating greenemitting CsPbBr3 @SiO2 composite powder and commercial red phosphors on blue chip. The fabricated white LED performed excellent light characteristics with a luminous efficacy (eta(L)) of 58.9 ImW(-1) and a correlated color temperature (CCT, T-c) of 5829 K (current = 20 mA), it also display a wide color gamut with 126.8% of National Television System Committee (NTSC) color triangle area.