Weak localization and crossover from Lifshitz transition in two dimensions

被引:3
|
作者
Ding, Kai-He [1 ,2 ]
Zhu, Zhen-Gang [3 ,4 ,5 ]
Hu, Yong-Le [6 ]
Su, Gang [4 ,5 ,7 ]
机构
[1] Changsha Univ Sci & Technologl, Dept Phys & Elect Sci, Changsha 410076, Peoples R China
[2] Changsha Univ Sci & Technol, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410076, Peoples R China
[3] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
[4] Univ Chinese Acad Sci, Coll Phys Sci, Theoret Condensed Matter Phys & Computat Mat Phys, Beijing 100049, Peoples R China
[5] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[6] Changsha Univ Sci & Technol, Coll Automobile & Mech Engn, Changsha 410076, Peoples R China
[7] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100049, Peoples R China
基金
国家重点研发计划;
关键词
QUASI-PARTICLE LIFETIME; DIRAC FERMIONS; BERRYS PHASE; MAGNETORESISTANCE; SCATTERING; GAS;
D O I
10.1103/PhysRevB.104.155135
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dirac point plays a crucial role in regulating electronic properties of topological semimetals. In two dimensions, the manipulation of Dirac points can spur a transition from Dirac semimetal through semi-Dirac phase to a gapped phase. Across such a so-called Lifshitz transition, we find that the quantum interference corrections to the conductivity delta sigma(xx) and delta sigma(yy) are always negative, giving rise to a weak localization behavior. The ratio delta sigma(xx)/delta sigma(yy) undergoes a transition from linear to parabolic dependence on the merging parameter across the Lifshitz transition, which leads to a crossover of the temperature dependence of the inverse inelastic scattering time 1/T epsilon from similar to T to similar to T ln(T-0/T). This fingerprint behavior can be readily tested experimentally through merging Dirac points in two-dimensional lattices. This work presents an alternative perspective to understand weak localization through Lifshitz transition.
引用
收藏
页数:9
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