Curvature of band overlap in InAs/GaSb Type II superlattices

被引：11
|
作者：
Ekpunobi, AJ [1 ]
机构：
[1] Nnamdi Azikiwe Univ, Dept Phys & Ind Phys, Awka, Nigeria
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 04期
关键词：
D O I：
10.1016/j.mssp.2004.05.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tight binding calculations of the band alignment in InAs/GaSb type II broken-gap superlattices have been carried out with a valence band offset value of 0.57eV obtained at root temperature 300K., in good agreement with experiments. The valence band offset decreases with temperature, whereas the band overlap exhibits curvature with minimum at 550 K. It is inferred that there is no possibility of band alignment transition due to temperature. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：463 / 466
页数：4
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