Morphology of domain walls in in-plane magnetized thin films with exchange and dipolar interactions

被引：2
|
作者：
Robinson, SJ
Castro, J
Gehring, GA
机构：
[1] Univ of Sheffield, Sheffield
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期
关键词：
D O I：
10.1016/0304-8853(95)00815-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study theoretically the morphology of domain walls in thin films with in-plane magnetisation and exchange and dipolar interactions, as a function of film thickness, and examine the transition from 2d to 3d behaviour.
引用
收藏
页码：133 / 134
页数：2
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