A mathematical model to characterise effects of liquid hold-up on bosh silicon transport in the dripping zone of a blast furnace

被引：12

作者：

Das, S. K. ^{[1
]}

Kumari, Amrita ^{[1
]}

Bandopadhay, D. ^{[1
]}

Akbar, S. A. ^{[1
]}

Mondal, G. K. ^{[1
]}

机构：

[1] CSIR, Natl Met Lab, Jamshedpur 831007, Bihar, India

来源：

APPLIED MATHEMATICAL MODELLING | 2011年 / 35卷 / 09期

关键词：

Mathematical model; Blast furnace; Liquid hold-up; Dripping zone; Bosh silicon; Conservation equations; GAS; FLOW; FLUID;

D O I：

10.1016/j.apm.2011.02.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A first principle based mathematical model has been developed to characterise the effect of total liquid hold-up on the bosh silicon distribution behaviour in the dripping zone of a blast furnace. Two specific cases of hold-up behaviour have been investigated, namely, hold-up in the absence and in the presence of counter current gas flow conditions. The model exemplifies coupled phenomenon of chemical kinetics, transport processes and liquid hold-up to characterise the silicon behaviour in the dripping zone. The present modelling investigation shows that the bosh silicon level diminishes with the enhanced liquid hold-up in the dripping zone. Further, the influence of counter current gas flow on the hold-up is not significant. However, it has been observed that the liquid phase temperature reduces with increased liquid hold-up in dripping zone under steady state operating conditions. The model predictions of bosh silicon distribution have been validated with the published literatures (bulk values) and found to be in good agreement. (C) 2011 Elsevier Inc. All rights reserved.

引用

页码：4208 / 4221

页数：14