Modeling of Thermal Behavior in the Amorphous Silicon Thin Film Transistors

被引：0

作者：

Liu, Yuan ^{[1
]}

En, Yunfei ^{[1
]}

He, Yujuan ^{[1
]}

Lei, Zhifeng ^{[1
]}

机构：

[1] Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Guangdong, Peoples R China

来源：

PROCEEDINGS OF 2014 10TH INTERNATIONAL CONFERENCE ON RELIABILITY, MAINTAINABILITY AND SAFETY (ICRMS), VOLS I AND II | 2014年

基金：

中国博士后科学基金;

关键词：

amorphous silicon; thin film transistor; thermal impedance; temperature distribution; DEVICES; RESISTANCE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper proposed a two-dimensional thermal impedance model for amorphous silicon thin film transistors (a-Si: H TFTs) from a system of coupled energy equations, heat flowing equations and boundary conditions. By using of this model, the channel temperature distribution and thus the maximum channel temperature can be calculated. This model can be applied to describe the thermal behavior and thermal reliability of a-Si: H TFTS in the design phase.

引用

页码：142 / 145

页数：4

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