Visible/Near-Infrared-Light-Induced H2 Production over g-C3N4 Co-sensitized by Organic Dye and Zinc Phthalocyanine Derivative

被引:187
|
作者
Zhang, Xiaohu [1 ]
Peng, Tianyou [1 ]
Yu, Lijuan [1 ]
Li, Renjie [1 ]
Li, Qianqian [1 ]
Li, Zhen [1 ]
机构
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Peoples R China
来源
ACS CATALYSIS | 2015年 / 5卷 / 02期
关键词
co-sensitization; photocatalytic H-2 production; metal-free organic dye; asymmetric zinc phthalocyanine; broad spectral responsive range; DRIVEN HYDROGEN-PRODUCTION; GRAPHITIC CARBON NITRIDE; SOLAR-CELLS; ASYMMETRIC PHTHALOCYANINE; AQUEOUS SUSPENSION; HIGHLY EFFICIENT; EVOLUTION; TIO2; PHOTOCATALYST; GENERATION;
D O I
10.1021/cs5016468
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new route is carried out to achieve broad spectral responsive photocatalytic H-2 production over g-C3N4 co-sensitized by an indole-based D-pi-A organic dye (LI-4) and an asymmetric zinc phthalocyanine derivative (Zn-tri-PcNc) with complementary absorption spectra. Experimental results indicate that both LI-4 and Zn-tri-PcNc are efficient photosensitizers of g-C3N4 for H-2 production, and their co-sensitized g-C3N4 (LI-4/g-C3N4/Zn-tri-PcNc) exhibits an extremely high H-2 production activity (371.4 mu mol h(-1)) under visible/near-infrared (NIR) light (lambda >= 420 nm) irradiation, which approximates the summation of the H-2 production activity of LI-4/g-C3N4 (233.8 mu mol h(-1)) and Zn-tri-PcNc/g-C3N4 (132.3 mu mol h(-1)), although LI-4 and Zn-tri-PcNc can just absorb the light in the range of 400-600 and 600-750 nm, respectively. Moreover, the co-sensitized catalyst shows a broad visible/NIR light responsive range (400-800 nm) with impressively high apparent quantum yields (AQY) of 16.3, 7.7, and 1.75% at 420, 500, and 700 nm monochromatic light irradiation, respectively. The present work gives a new advance toward panchromatic light responsive photocatalytic application by combining the photosensitization of two different dyes with complementary absorption spectra on one kind of semiconductor.
引用
收藏
页码:504 / 510
页数:7
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