Highly selective NO detection using Bi2O3-based materials

被引：0
|
作者：
Higaki, K [1 ]
Kudo, S [1 ]
Ohnishi, H [1 ]
机构：
[1] Osaka Gas Co Ltd, Fundamental Res Labs, Dept Res & Dev, Osaka, Japan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report that a notable sensitivity and remarkable selectivity for NO, as compared to those for CO and H-2, can be obtained in undoped Bi2O3 at temperatures below 673 K on which Pt electrodes were formed. Bi2O3 doped with ions of lower valence than Bi3+ was also fabricated and its sensing characteristics were measured. Good selectivity for NO was observed in these doped materials. Among these, Ni-doped Bi2O3 exhibited the highest sensitivity for NO, compared to that for other components in exhaust gases, such as CH4, C2H6, C3H8, iso-C4H10, as well as a quick response to NO. (C) 1998 The Electrochemical Society. S1099-0062(98)03-059-4. All rights reserved.
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页码：107 / 109
页数：3
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