An all-epitaxial InP-based 1.55μm VCSEL process with defect-free AlxOy/GaAs distributed Bragg reflector mirrors

被引：0
|
作者：
Gebretsadik, H [1 ]
Kamath, K [1 ]
Bhattacharya, P [1 ]
Caneau, C [1 ]
Bhat, R [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1.55 mu m InP-based vertical cavity surface emitting laser process, which uses growth of defect-free Al(Ga)As/GaAs Distributed Bragg Reflector mirrors on patterned InP-based heterostructures was designed. This new mirror technology enabled the formation of a short-stack AlxOy/GaAs DBR mirror. In addition, the formation of a dielectric aperture by the partial oxidation of lattice-matched InAlAs was characterized and encorporated into the process.
引用
收藏
页码：307 / 309
页数：3
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