Device performance of ultra-violet emitting diodes grown by MBE

被引：5

作者：

Mayer, M ^{[1
]}

Pelzmann, A ^{[1
]}

Kirchner, C ^{[1
]}

Schauler, M ^{[1
]}

Eberhard, F ^{[1
]}

Kamp, M ^{[1
]}

Unger, P ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

LED; WED; MBE; NH3; MCp2Mg; GaN;

D O I：

10.1016/S0022-0248(98)00293-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultra-violet emitting diodes Frith electroluminescence linewidths as narrow as 8 nm have been grown by molecular beam epitaxy. Double-heterostructure pn- and homotype pin-diodes reveal single-peak emission at wavelengths around 371 nm. The dependence of the optical output power on the forward current indicates light generation by diffusion current. Turn-on and reverse breakdown voltages are 4-5 V and above 30 V: respectively. For the first time, the metalorganic precursor MCp2Mg is employed as p-dopant in nitride molecular beam epitaxy. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：782 / 785

页数：4

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