Photoluminescence investigation of high quality GaAs1-xBix on GaAs

被引：37
|
作者：
Mohmad, A. R. [1 ,2 ]
Bastiman, F. [1 ]
Ng, J. S.
Sweeney, S. J. [3 ,4 ]
David, J. P. R. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43000, Selangor, Malaysia
[3] Univ Surrey, Dept Phys, Surrey GU2 7XH, England
[4] Univ Surrey, Adv Technol Inst, Surrey GU2 7XH, England
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期
基金：
英国工程与自然科学研究理事会;
关键词：
MOLECULAR-BEAM EPITAXY; SEMICONDUCTORS; TEMPERATURE; DEPENDENCE; GROWTH; GAP;
D O I：
10.1063/1.3565244
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) of GaAs0.97Bi0.03 alloy was measured over a wide range of temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 nm and full-width-half-maximum of 75 meV was observed which is relatively low for this composition. The improved quality is believed due to reduced alloy fluctuations by growing at relatively high temperature. The temperature dependence of PL peak energy indicated significant exciton localization at low temperatures. Furthermore, the band gap temperature dependence was found to be weaker than GaAs. An analysis of dominant carrier recombination mechanism(s) was also carried out indicating that radiative recombination is dominant at low temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565244]
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页数：3
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