Innovative method to study irradiation damage in silicon pixel detectors for HEP: TLM

被引：0

作者：

Saleem-Rashid, T. ^{[1
]}

Lounis, A. ^{[1
]}

Perrossier, J. L. ^{[2
]}

Hohov, D. ^{[1
]}

Coudevylle, J. R. ^{[2
]}

Villebasse, C. ^{[2
]}

Isac, N. ^{[2
]}

机构：

[1] Univ Paris Saclay, CNRS, IN2P3, LAL,Univ Paris Sud, Orsay, France

[2] IEF, Orsay, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2020年 / 958卷

关键词：

Silicon detectors; Irradiation damage; TLM; HEP; Pixel;

D O I：

10.1016/j.nima.2019.162863

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. This study of radiation damage in silicon detectors will give us some insight of changes in the active dopant concentration and how much electrically active carriers are lost after intense radiation exposure. Answering these questions will help us to understand if this loss of active carrier affect the performance of silicon detector used in experiments. This work presents the innovative Transmission Line Model (TLM) method used for the first time to measure the electrically active carrier concentration in silicon detectors. Hence, provide us with another way to study the radiation damage and its effects on the detector performance by studying the variation of the active dopant concentration before and after irradiation.

引用

页数：6

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