Radiation resistance of advanced GaAs MESFETs

被引：1
|
作者：
Kiselyova, EV [1 ]
Kitaev, MA [1 ]
Obolensky, SV [1 ]
Trofimov, VT [1 ]
Kozlov, VA [1 ]
机构：
[1] NI Lobachevskii State Univ, Nizhnii Novgorod 603950, Russia
来源：
TECHNICAL PHYSICS | 2005年 / 50卷 / 04期
关键词：
Radiation; GaAs; Channel Length; Fast Neutron; Radiation Resistance;
D O I：
10.1134/1.1901799
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The radiation resistance of GaAs MESFETs with a channel length of 30-80 nm is studied. It is shown that the resistance is controlled by quasi-ballistic effects in the transistor channel and amounts to 5 x 10(14)-5 x 10(15) fast neutrons per square centimeter. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：528 / 530
页数：3
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