A Case Study of Trapped Charge Induced Surface Leakage

被引：0
|
作者：
Wang, Xiang-Dong [1 ]
Cheng, Xu [1 ]
Stefanov, Evgueniy [1 ]
Godek, William [1 ]
机构：
[1] NXP Semicond, Chandler, AZ 85224 USA
来源：
ISTFA 2017: CONFERENCE PROCEEDINGS FROM THE 43RD INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2017年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：160 / 163
页数：4
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