Metal-contact enhanced incorporation of deuterium in 4H-and 6H-SiC

被引:4
|
作者
Linnarsson, MK
Spetz, AL
Janson, MS
Ekedahl, LG
Karlsson, S
Schöner, A
Lundström, I
Svensson, BG
机构
[1] Royal Inst Technol, SE-16440 Kista, Sweden
[2] Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden
[3] Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden
[4] ACREO, SE-16440 Kista, Sweden
关键词
deuterium; diffusion; secondary ion mass spectrometry;
D O I
10.4028/www.scientific.net/MSF.338-342.937
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Deuterium was introduced in p-type SiC from a gas ambient. The samples were partially coated with 200 Angstrom thick metal layer of titanium, nickel, platinum or gold. Heat treatments were performed in the temperature range 500-800 degreesC during 4 h. Secondary ion mass spectrometry (SIMS) was used to measure the deuterium content after deuterium exposure. The catalytic metal coating is shown to play an important role for introducing deuterium into SiC. Nickel and platinum facilitate hydrogen incorporation in p-type SiC, which may be due to an increased hydrogen concentration at the metal/SiC interface and/or an increase the H+ ions to H ratio. No in-diffusion of deuterium is observed using titanium although large quantities of deuterium are stored in the titanium film. Furthermore, gold reveals an inert character and does not promote in-diffusion of deuterium.
引用
收藏
页码:937 / 940
页数:4
相关论文
共 50 条
  • [1] Metal-contact enhanced incorporation of deuterium in 4H- and 6H-SiC
    Linnarsson, M.K.
    Spetz, A. Lloyd
    Janson, M.S.
    Ekedahl, L.G.
    Karlsson, S.
    Schöner, A.
    Lundström, I.
    Svensson, B.G.
    Materials Science Forum, 2000, 338
  • [2] 4H-and 6H-SiC UV photodetectors
    Ostlund, Ludwig
    Wang, Qin
    Esteve, Romain
    Almqvist, Susanne
    Rihtnesberg, David
    Reshanov, Sergey
    Zhang, Andy Z. Z.
    Lim, Jang-Kwon
    Bakowski, Mietek
    Schoner, Adolf
    Kaplan, Wlodek
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1680 - 1682
  • [3] Impact ionization coefficients of 4H-and 6H-SiC
    Sun, C. C.
    You, A. H.
    Wong, E. K.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 60 (01):
  • [4] Diffusion of light elements in 4H-and 6H-SiC
    Linnarsson, MK
    Janson, MS
    Karlsson, S
    Schöner, A
    Nordell, N
    Svensson, BG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 275 - 280
  • [5] Impact ionization of nitrogen in 4H-and 6H-SiC
    Sankin, V. I.
    Petrov, A. G.
    Kaliteevski, M.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
  • [6] Hot spots caused by contact inhomogeneities in 4H-and 6H-SiC Schottky structures
    Kurel, R
    Rang, T
    ADVANCED COMPUTATIONAL METHODS IN HEAT TRANSFER VI, 2000, 3 : 437 - 444
  • [7] Silicate monolayers on the hexagonal surfaces of 4H-and 6H-SiC
    Bernhardt, J
    Schardt, J
    Starke, U
    Heinz, K
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 383 - 386
  • [8] Temperature dependence of refractive indices for 4H-and 6H-SiC
    Xu, Chunhua
    Wang, Shunchong
    Wang, Gang
    Liang, Jingkui
    Wang, Shanpeng
    Bai, Lei
    Yang, Junwei
    Chen, Xiaolong
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
  • [9] Simulations of submicron MOSFETs in 2H-, 4H-and 6H-SiC
    Dubaric, E
    Bertilsson, K
    Nilsson, HE
    PHYSICA SCRIPTA, 2002, T101 : 14 - 17
  • [10] Excitation spectra of nitrogen bound excitons in 4H-and 6H-SiC
    Egilsson, T
    Ivanov, IG
    Henry, A
    Janzén, E
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2028 - 2032