Effects of ITO Electrode Modification Using CsF Solution on Performance of Organic Light-Emitting Diodes

被引:9
|
作者
Lu, Hsin-Wei [1 ]
Huang, Ching-Wen [1 ]
Kao, Po-Ching [2 ]
Chu, Sheng-Yuan [1 ,3 ]
Juang, Yung-Der [4 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Chiayi Univ, Dept Electrophys, Chiayi 60004, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[4] Natl Univ Tainan, Dept Mat Sci, Tainan 70005, Taiwan
关键词
INDIUM-TIN-OXIDE; BUFFER LAYER; SURFACE-ENERGY; CONTACT-ANGLE; DEVICES; EFFICIENCY; ELECTROLUMINESCENCE; POLYMERS; DISPLAYS; FILMS;
D O I
10.1149/2.0221503jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the effects of indium tin oxide (ITO) surface modification on organic light-emitting diode performance are investigated. ITO electrodes were soaked in CsF solution of various concentrations and then subjected to ultraviolet (UV)-ozone treatment. The standard device structure is ITO/a-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris (8-hydroxyquinoline) aluminum (Alq(3)) (60 nm)/LiF (1 nm)/Al (150 nm). Modifying the ITO surface with the optimal 10 wt% CsF solution significantly improved device performance. The driving voltage was reduced from 3.5 V for standard devices to 3 V, the luminance was increased from 13200 to 20300 cd/m2, and the efficiency was increased from 2.8 to 3 cd/A. Work function estimates from Riken Keiki AC-2 measurements suggested that the work function of pristine ITO electrode was increased from 4.78 to 5.11 eV after modification. Measurements of energy band, surface energy and surface polarity indicated device improvement came from the simultaneous increase in work function and surface energy of ITO by soaking the ITO electrodes in the CsF solution followed by ultraviolet (UV)-ozone treatment. (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码:R54 / R59
页数:6
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