Synthesis of β-GaN nanocrystals with a cubic structure by gas-phase chemical reaction

被引:2
|
作者
Fang, K [1 ]
Gao, SM
Qiu, HL
Cao, CB
Zhu, HS
机构
[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China
[2] Beijing Univ Sci & Technol, Dept Mat Sci & Engn, Beijing 100083, Peoples R China
[3] Yantai Normal Univ, Coll Chem & Mat Sci, Yantai 264025, Peoples R China
关键词
gallium nitride; cubic structure; nanocrystalline;
D O I
10.7498/aps.54.2267
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
beta-GaN nanocrystalline have been successfully synthesized from the nitridation of GaP nanocrystalline at low temperatures by gas-phase chemical reaction. The starting GaP nanocrystalline has a large specific surface and a high reactivity that can reduce remarkably the difficulty of nitridation. The results of GaP nanocrystalline in N-2 at different heating rates support the fact that beta- GaN nanocrystalline can form in GaP nanocrystalline via N-P metathesis gas-phase chemical mechanism. The mechanism is different when different heating rate was used. This method is very simple and is used generally to synthesize beta-GaN nanoparticles or nanorods.
引用
收藏
页码:2267 / 2271
页数:5
相关论文
共 25 条
  • [1] Low pressure synthesis of bulk, polycrystalline gallium nitride
    Argoitia, A
    Hayman, CC
    Angus, JC
    Wang, L
    Dyck, JS
    Kash, K
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (02) : 179 - 181
  • [2] Laser-assisted catalytic growth of single crystal GaN nanowires
    Duan, XF
    Lieber, CM
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) : 188 - 189
  • [3] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    [J]. NATURE, 2001, 409 (6816) : 66 - 69
  • [4] Mild benzene-thermal route to GaP nanorods and nanospheres
    Gao, SM
    Xie, Y
    Lu, J
    Du, GA
    He, W
    Cui, DL
    Huang, BB
    Jiang, MH
    [J]. INORGANIC CHEMISTRY, 2002, 41 (07) : 1850 - 1854
  • [5] Optical and microstructural characterization of chemically synthesized gallium nitride nanopowders
    Gonsalves, KE
    Rangarajan, SP
    Carlson, G
    Kumar, J
    Yang, K
    Benaissa, M
    JoseYacaman, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2175 - 2177
  • [6] Control of thickness and orientation of solution-grown silicon nanowires
    Holmes, JD
    Johnston, KP
    Doty, RC
    Korgel, BA
    [J]. SCIENCE, 2000, 287 (5457) : 1471 - 1473
  • [7] Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO
  • [8] 2-H
  • [9] TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE
    HWANG, JW
    CAMPBELL, JP
    KOZUBOWSKI, J
    HANSON, SA
    EVANS, JF
    GLADFELTER, WL
    [J]. CHEMISTRY OF MATERIALS, 1995, 7 (03) : 517 - 525
  • [10] Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x.: X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe3)2, and (Me3Si)2P[μ-GaEt2]2Sb(SiMe3)2
    Jouet, RJ
    Wells, RL
    Rheingold, AL
    Incarvito, CD
    [J]. JOURNAL OF ORGANOMETALLIC CHEMISTRY, 2000, 601 (01) : 191 - 198