On impact of the photo-induced space charge upon semiconductor photo-response dependence on the concentration of recombination centers under weak optical radiation

被引:6
|
作者
Kholodnov, VA [1 ]
Drugova, AA [1 ]
机构
[1] State Unitary Enterprise RD&P Ctr Orion, Dept Theoret, Moscow 111123, Russia
关键词
photo-induced space charge; photo-carrier concentration; photo-EMF; photoconductor; photoelectric gain; recombination; deep impurity; electron and hole lifetimes; gigantic splash; strongly non-monotonically; insufficiency of the approximation of quasi-neutrality;
D O I
10.1117/12.407731
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The results of theoretical analysis of influence of the photo-induced space charge upon the photo-carrier initiation, the Dember's effect (photo-EMF) and the photocurrent amplification in the case of inter-band absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The tasks (including the effect of the gigantic splash of semiconductor photoconductivity upon an increase in the concentration of recombination centers) are solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solutions beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.
引用
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页码:186 / 212
页数:27
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