Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

被引：13

作者：

Mitani, Y ^{[1
]}

Satake, H ^{[1
]}

Itoh, H ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the realization of highly reliable deuterated oxide by deuterium pyrogenic oxidation and poly-Si deposition using deuterated monosilane gas (SiD4). The properties of these deuterated oxides are compared with those of deuterium-annealed oxide. It is concluded that the improvement of the gate oxide reliability by a deuterium incorporation is dependent on the method whereby deuterium is incorporated into gate oxide film and that deuterium atoms, which is incorporated into both Si/SiO2 interface and bulk-SiO2 by the oxidation and poly-Si deposition, play an important role in the suppression of electron trap creation under Fowler-Nordheim (F-N) stress.

引用

页码：343 / 346

页数：4

共 9 条

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Mitani, Y
Satake, H
Itoh, H
Toriumi, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) : 1192 - 1197
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) : 175 - 180
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Yang, B. L.
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MICROELECTRONICS RELIABILITY, 2006, 46 (12) : 2044 - 2048
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SATAKE, H
TORIUMI, A
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[8] Analysis of electron Tunneling components in p+ poly-gate p-channel metal-oxide-semiconductor field-effect transistors from direct tunneling region to Fowler-Nordheim region
Kang, Ting-Kuo
Wu, San-Lein
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5B): : 3193 - 3196
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Kodigala, Subba Ramaiah
PHYSICA B-CONDENSED MATTER, 2016, 500 : 35 - 43

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