Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers

被引:16
|
作者
Jambois, O.
Carreras, Josep
Perez-Rodriguez, A.
Garrido, B.
Bonafos, C.
Schamm, S.
Ben Assayag, G.
机构
[1] Univ Barcelona, Dept Elect, EME, IN2UB, E-08028 Barcelona, Spain
[2] CNRS, CEMES, nMat Grp, F-31055 Toulouse 04, France
关键词
D O I
10.1063/1.2807281
中图分类号
O59 [应用物理学];
学科分类号
摘要
White and tunable electroluminescence has been obtained by field effect injection in 40 nm thick Si- and C-rich SiO2 layers. The films, synthesized by ion implantation, contain Si and C-rich nanoparticles embedded in SiO2 which were formed by annealing at 1100 degrees C. Shifting of the distribution of C-related centers toward the interface region with the substrate allows us to obtain a characteristic white electroluminescence emission under pulsed excitation conditions. Moreover, an evolution of the emission spectrum from white to red is observed by changing the frequency of the pulse. A power efficiency higher than 10(-3)% is estimated. This work opens interesting perspectives on color tunability of field effect electroluminescent devices. (C) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Ion beam processing for Si/C-rich thermally grown SiO2 layers:: photoluminescence and microstructure
    Rebohle, L
    Gebel, T
    Fröb, H
    Reuther, H
    Skorupa, W
    APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 156 - 160
  • [2] Electroluminescence from thin SiO2 layers after Si- and C-coimplantation
    Gebel, T
    Rebohle, L
    Sun, J
    Skorupa, W
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4): : 366 - 369
  • [3] Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering
    Fu, Sheng-Wen
    Chen, Hui-Ju
    Wu, Hsuan-Ta
    Shih, Chuan-Feng
    VACUUM, 2016, 126 : 59 - 62
  • [4] Memory effects of ion-beam synthesized Ge and Si in thin SiO2 -: Layers
    Gebel, T
    von Borany, J
    Skorupa, W
    Möller, W
    Thees, HJ
    Wittmaack, M
    Stegemann, KH
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 375 - 379
  • [5] Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers
    Chae, KH
    Son, JH
    Chang, GS
    Kim, HB
    Jeong, JY
    Im, S
    Song, JH
    Kim, KJ
    Kim, HK
    Whang, CN
    NANOSTRUCTURED MATERIALS, 1999, 11 (08): : 1239 - 1243
  • [6] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
    Heng, CL
    Zhang, BR
    Qiao, YP
    Ma, ZC
    Zong, WH
    Qin, GG
    PHYSICA B, 1999, 270 (1-2): : 104 - 109
  • [7] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
    Heng, C.L.
    Zhang, B.R.
    Qiao, Y.P.
    Ma, Z.C.
    Zong, W.H.
    Qin, G.G.
    Physica B: Condensed Matter, 1999, 270 (1-2): : 104 - 109
  • [8] Photoluminescences from Si nanocrystals in ion-beam-mixed Si/SiO2 layers
    Chae, KH
    Son, JB
    Kim, HB
    Im, S
    Lyo, IW
    Whang, CN
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 36 (03) : 169 - 172
  • [9] Electroluminescence of Si, Ge and Ar ion-implanted Si-rich SiO2
    Wang, Yanbing
    Sun, Yongke
    Qiao, Yongping
    Zhang, Borui
    Qin, Guogang
    Chen, Wentai
    Gong, Yiyuan
    Wu, Dexin
    Ma, Zhenchang
    Zong, Wanhua
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (07): : 667 - 672
  • [10] Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesized in thin SiO2 layers
    Carrada, M
    Bonafos, C
    Assayaga, GB
    Chassaing, D
    Normand, P
    Tsoukalas, D
    Soncini, V
    Claverie, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 513 - 515