Reactive magnetron sputtering of uniform yttria-stabilized zirconia coatings in an industrial setup

被引:16
|
作者
Sonderby, S. [1 ,2 ]
Nielsen, A. J. [1 ,3 ,4 ]
Christensen, B. H. [1 ]
Almtoft, K. P. [1 ]
Lu, J. [2 ]
Jensen, J. [2 ]
Nielsen, L. P. [1 ]
Eklund, P. [2 ]
机构
[1] Danish Technol Inst, Tribol Ctr, DK-8000 Aarhus C, Denmark
[2] Linkoping Univ, IFM, Dept Phys Chem & Biol, Div Thin Film, SE-58183 Linkoping, Sweden
[3] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark
[4] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
来源
SURFACE & COATINGS TECHNOLOGY | 2012年 / 206卷 / 19-20期
关键词
Physical vapor deposition (PVD); Solid oxide fuel cell (SOFC); X-ray diffraction (XRD); Electron microscopy; Elastic recoil detection analysis (ERDA); OXIDE FUEL-CELLS; YSZ THIN-FILMS; BIAXIAL ALIGNMENT; DEPOSITION; CONDUCTIVITY; GROWTH; LAYERS;
D O I
10.1016/j.surfcoat.2012.04.007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputtering in an industrial scale setup on silicon wafers as well as commercial NiO-YSZ fuel cell anodes. The texture, morphology, and composition of the deposited films were investigated as a function of deposition parameters. Homogeneous coatings could be deposited over large areas within the coating zone, which is important for industrial applications. The use of substrate bias during film growth was identified as a key parameter to promote less columnar coatings and made it possible to tailor the texture of films deposited on Si. Bias voltages <= - 40V resulted in highly < 200 > textured YSZ films, intermediate bias voltages of - 50 V to - 70 V in < 220 > textured films and high bias voltages (>= - 90 V) in a mixed orientation. In contrast, films grown on NiO-YSZ were seen to be randomly orientated when deposited at substrate bias voltages <= - 30 V. When bias was further increased the film took over the orientation of underlying substrate due to substrate template effects. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:4126 / 4131
页数:6
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