HEMT: Looking back at its successful commercialization

被引：0
|
作者：
Mimura, T [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 10期
关键词：
high electron mobility transistor; HEMT; GaAs MESFET; radio telescope; broadcasting satellite;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The history of the development of the High Electron Mobility Transistor (HEMT) is an outstanding illustration of how a new device can be successfully marketed. In this paper we discuss a key to successful commercialization of new devices.
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页码：1908 / 1910
页数：3
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