Over 1.0 kV GaN p-n junction diodes on free-standing GaN substrates

被引：78
|
作者：
Nomoto, Kazuki [1 ]
Hatakeyama, Yoshitomo [2 ]
Katayose, Hideo [2 ]
Kaneda, Naoki [3 ]
Mishima, Tomoyoshi [3 ]
Nakamura, Tohru [1 ,2 ]
机构：
[1] Hosei Univ, Res Ctr Micronano Technol, Tokyo 1840003, Japan
[2] Hosei Univ, Dept Elect Elect & Comp Engn, Tokyo 1848584, Japan
[3] Hitachi Cable Ltd, Corp Adv Technol Grp, Ibaraki 3000026, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 07期
关键词：
free-standing GaN substrates; GaN; high breakdown voltage; p-n diodes; VOID-ASSISTED SEPARATION; VAPOR-PHASE EPITAXY; RECTIFIERS; VOLTAGE;
D O I：
10.1002/pssa.201000976
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This report describes the fabrication and characteristics of GaN p-n junction diodes on free,standing GaN substrates with low dislocation density. We have demonstrated GaN p-n junction diodes with a unique field-plate (FP) structure. The breakdown voltage V(B) is further imporved due to the FP structure and the low dislocation density. The breakdown voltage of a diode of 60mm in diameter with the FP structure is over - 1000 V, and the leakage current is below 10(-9) A until reaching the breakdown voltage. Even in larger diodes (100 and 200 um in diameter) with FP, the breakdown voltage is over -800V. However, the specific on resistance R(on) is high due to damage by the plasma process of sputtering. The specific on resistance is further imporved due to using a low damage passivation film. As a result, a specific on resistance of 1.2 Omega m.cm(2) is obtained. (C) 2011 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim
引用
收藏
页码：1535 / 1537
页数：3
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