High sensitivity background absorption measurements in semiconductors

被引：2
|
作者：
Giannini, Nathan [1 ]
Silva, Junior R. [1 ,2 ]
Wang, Chengao [1 ]
Albrecht, Alexander R. [1 ]
Melgaard, Seth D. [1 ]
Sheik-Bahae, Mansoor [1 ]
机构：
[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[2] Univ Estadual Mato Grosso Sul, Programa Posgrad Recursos Nat, Ivinhema, RS, Brazil
来源：
LASER REFRIGERATION OF SOLIDS VIII | 2015年 / 9380卷
基金：
美国国家科学基金会;
关键词：
External quantum efficiency (EQE); background absorption; double heterostructure (DHS); GaAs; optical refrigeration;
D O I：
10.1117/12.2080087
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Laser cooling in InGaP vertical bar GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP vertical bar GaAs DHS as well as GaAs vertical bar AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.
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页数：8
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