Plasma damage and repair of porous low-k carbon-doped oxide films

被引：0

作者：

Yoo, Hui Jae ^{[1
]}

Bielefeld, Jeffery D. ^{[1
]}

Balakrishnan, Sridhar ^{[1
]}

Boyanov, Boyan ^{[1
]}

Clendenning, Scott B. ^{[1
]}

Kloster, Grant M. ^{[1
]}

Paluda, Patrick M. ^{[1
]}

RamachandraRao, Vijayakumar S. ^{[1
]}

Suri, Satyarth ^{[1
]}

Younkin, Todd R. ^{[1
]}

机构：

[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous carbon-doped oxide (p-SiCOH) films with ultra-low dielectric constants (k <= 2.5) are being evaluated as a means for reducing RC delay in the back-end-of-the-line. However, there have been significant problems in the integration of porous inter-layer dielectrics (ILDs) due to in-line degradation of both mechanical and electrical film properties. This paper discusses which integrated process steps cause the greatest dielectric damage, and methods used for damage reduction and repair. End-of-line measurements showing virtually no k degradation are presented.

引用

页码：705 / 709

页数：5

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