Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress

被引：17
|
作者：
Chong, Eugene [1 ,2 ]
Chun, Yoon Soo [1 ]
Lee, Sang Yeol [1 ,2 ]
机构：
[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea
[2] Univ Sci & Technol, Taejon 305333, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 02期
关键词：
INSTABILITY;
D O I：
10.1149/1.3518518
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We fabricated high-performance thin-film transistors (TFTs) with a silicon-indium-zinc-oxide (SIZO ) channel layer deposited by radio frequency sputtering at room temperature. The SIZO-TFTs passivated with poly (methyl methacrylate) showed a field effect mobility of 8 cm(2)/V . s and a subthreshold swing of 90 mV/decade even with a process temperature below 150 degrees C. Si acted as a stabilizer and carrier suppressor in the In-Zn-O system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied. (C) 2010 The Electrochemical Society. (DOI: 10.1149/1.3518518) All rights reserved.
引用
收藏
页码：H96 / H98
页数：3
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