A novel 0.15-μm high-aspect-ratio T-shaped gate fabrication process using a 248nm DUV stepper

被引：0
|
作者：
Wang, Shuai [1 ]
Lin, Gang [1 ]
Chen, TangSheng [1 ]
机构：
[1] Nanjing Elect Devices Inst, Natl Key Lab Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China
来源：
2008 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, VOLS 1-4 | 2008年
关键词：
D O I：
10.1109/ICNNSP.2008.4590331
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 0.15 mu m GaAs-based PHEMT process on 100mm wafers using 248nm stepper based technology for millimeter wave applications is developed. This process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15 mu m PHEMTs with high-aspect-ratio (approximate to 4.5) gates are successfully fabricated using this process, exhibiting a good millimeter-wave performance with a f(T) of 82.7GHz and a power gain greater than 15dB at 12GHz.
引用
收藏
页码：159 / 162
页数：4
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