Novellest research on ferroelectric BaxSr1-xTiO3 thin films

被引：0
|
作者：
Zhu, XH [1 ]
Zhu, JG
Zheng, DN
Li, L
机构：
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2003年 / 18卷 / 05期
关键词：
ferroelectric/dielectric thin film; barium strontium titanate (BST-x); microwave devices; dynamic random access device;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ferroelectric (Ba,Sr)TiO3 thin films have excellent ferroelectric/dielectric properties, and promising application prospect in tunable microwave devices and dynamic random access devices. In this article, their research backgrounds, basic structures, preparation methods, various characterizations of thin film properties, and applications are summarized. Furthermore, the several important problems of the current researches of (Ba,Sr)TiO3 thin films are also discussed in great detail based on the acquired research results.
引用
收藏
页码：989 / 997
页数：9
相关论文
共 39 条
  • [1] FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED PB(ZR, TI)O3 THIN-FILMS
    AMANUMA, K
    MORI, T
    HASE, T
    SAKUMA, T
    OCHI, A
    MIYASAKA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9B): : 4150 - 4153
  • [2] Phase diagrams and dielectric response of epitaxial barium strontium titanate films: A theoretical analysis
    Ban, ZG
    Alpay, SP
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9288 - 9296
  • [3] Characterization of sputtered barium strontium titanate and strontium titanate thin films
    Baumert, BA
    Chang, LH
    Matsuda, AT
    Tsai, TL
    Tracy, CJ
    Gregory, RB
    Fejes, PL
    Cave, NG
    Taylor, DJ
    Otsuki, T
    Fujii, E
    Hayashi, S
    Suu, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2558 - 2566
  • [4] High tunability of the permittivity of YBa2Cu3O7-delta/SrTiO3 heterostructures on sapphire substrates
    Boikov, YA
    Claeson, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) : 3232 - 3236
  • [5] Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters
    Carlson, CM
    Rivkin, TV
    Parilla, PA
    Perkins, JD
    Ginley, DS
    Kozyrev, AB
    Oshadchy, VN
    Pavlov, AS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1920 - 1922
  • [6] The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films
    Chang, WT
    Horwitz, JS
    Carter, AC
    Pond, JM
    Kirchoefer, SW
    Gilmore, CM
    Chrisey, DB
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (07) : 1033 - 1035
  • [7] Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications
    Chen, CL
    Feng, HH
    Zhang, Z
    Brazdeikis, A
    Huang, ZJ
    Chu, WK
    Chu, CW
    Miranda, FA
    Van Keuls, FW
    Romanofsky, RR
    Liou, Y
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (03) : 412 - 414
  • [8] Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters
    Chen, CL
    Shen, J
    Chen, SY
    Luo, GP
    Chu, CW
    Miranda, FA
    Van Keuls, FW
    Jiang, JC
    Meletis, EI
    Chang, HY
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (05) : 652 - 654
  • [9] Fabrication and characterization of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process
    Cheng, JG
    Tang, J
    Meng, XJ
    Guo, SL
    Chu, JH
    Wang, M
    Wang, H
    Wang, Z
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2001, 84 (07) : 1421 - 1424
  • [10] Structure-property relationships in pure and acceptor-doped Ba1-xSrxTiO3 thin films for tunable microwave device applications
    Cole, MW
    Hubbard, C
    Ngo, E
    Ervin, M
    Wood, M
    Geyer, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 475 - 483
1234