Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

被引：43
|
作者：
Lei, M. [1 ,2 ]
Yang, H. [2 ]
Li, P. G. [1 ]
Tang, W. H. [1 ]
机构：
[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Dev, Dept Phys, Hangzhou 310018, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 459卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
AlN; nanowires; direct nitridation process;
D O I：
10.1016/j.jallcom.2007.04.265
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AIN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AIN nanowires. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：338 / 342
页数：5
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