Power-Side-Channel Analysis of Carbon Nanotube FET Based Design

被引:0
|
作者
Suresh, Chandra K. H. [1 ]
Mazumdar, Bodhisatwa [2 ]
Ali, Sk Subidh [2 ]
Sinanoglu, Ozgur [2 ]
机构
[1] NYU, New York, NY 10003 USA
[2] New York Univ Abu Dhabi, Abu Dhabi, U Arab Emirates
来源
2016 IEEE 22ND INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS) | 2016年
关键词
Carbon Nanotube (CNT) Field Effect Transistor (CNT-FET); Power Delay Product (PDP); Cipher; Hardware Security; SPA; CPA; VIRTUAL-SOURCE MODEL; HIGH-SPEED; PERFORMANCE; LEAKAGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Continuous scaling of CMOS technology beyond subnanometer region has aggravated short-channel effects, resulting in increased leakage current and high power densities. Furthermore, elevated leakage current and power density render CMOS based security-critical applications vulnerable to power-side-channel attacks. Carbon Nanotubes (CNT) is a promising alternative to CMOS technology. It offers superior transport properties, excellent thermal conductivities, high current capacities, and low power densities. Besides area, power and performance, adherence to hardware security aspects have become an important criteria today. In this work, we present the first study on power-side-channel analysis of ciphers implemented using CNTFETs. Our simulation results show that for 130 power traces, the simple power analysis (SPA) attack success rate is less than 0.35 for CNTFET based ciphers, whereas it is greater than 0.95 for CMOS based ciphers. For correlation power analysis, the difference of correlation coefficient of the correct key and closest wrong key guess is 1.3 for CMOS based design, and less than 0.56 for CNTFET based ciphers for 20,000 power traces, which implies lesser distinguishability of correct key in case of CNTFETs. These results indicate that CNT offers a higher resilience to power-side-channel attacks than CMOS.
引用
收藏
页码:215 / 218
页数:4
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