Study Of 1/f Noise Characteristics In Cu/n-GaN Schottky Barrier Diode

The 1/f noise characteristics of Cu/n-GaN Schottky barrier diode in the forward bias region have been studied. Temperature dependent 1/f noise measurements were performed over a wide range of temperature from 100 to 320K and frequency range of 1 to 100 Hz. The noise spectra exhibited frequency dependence proportional with 1/f. implying that flicker noise is dominant. Current dependence of noise was analyzed in order to fix the diode current such that the noise may be determined by the Schottky barrier alone without the contribution from the series resistance. It was observed that the spectral power density of current noise SI was nearly independent of temperature. This behavior has been attributed to the modulation of the charge density by multi step tunneling process within the space charge region of the semiconductor.