A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

被引:15
|
作者
Luo, Chengzhi [1 ,2 ]
Wan, Da [1 ,2 ]
Jia, Junji [1 ,2 ,3 ]
Li, Delong [1 ,2 ]
Pan, Chunxu [1 ,2 ,4 ]
Liao, Lei [1 ,2 ]
机构
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Univ, MOE Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Ctr Theoret Phys, Wuhan 430072, Peoples R China
[4] Wuhan Univ, Ctr Electron Microscopy, Wuhan 430072, Peoples R China
关键词
HIGH-PERFORMANCE ELECTRONICS; CHEMICAL-VAPOR-DEPOSITION; GROWTH; TRANSISTORS; ARRAYS; MECHANISM; ALIGNMENT; FILMS;
D O I
10.1039/c6nr03928f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm(2) V-1 s(-1) and an on/off ratio of 10(6). We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.
引用
收藏
页码:13017 / 13024
页数:8
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