Nickel deposition on silicon surfaces

Experimental results of laser assisted chemical vapour deposition (LCVD) of nickel from Ni(CO)(4) and theoretical treatment of deposition process are presented. The nickel deposition has been realised by scanning of Ar+ laser beam (100-400 mW, lambda=5 15 nm and 488 nm) on Si surfaces in atmosphere of Ni(C0)4 with 0.2-2.0 mbars with scanning speeds of 20-700 mu m/s. As a result homogeneous Ni lines on Si have been deposited with a typical volumetric growth rate of 250 mu m(3)/s and widths of 10-20 mu m and thickness of 0.2-0.5 mu m. The electrical resistivity of lines deposited was cca 7 mu Omega cm. The theoretical treatment includes computations of the temperature distribution in both gas-phase and solid substrate. The reaction rate is computed on base of local concentration and local temperatures, within the frame of finite element methods using triangles as a base of computing.