Effect of Interfacial Reaction on Joint Strength of Semiconductor Metallization and Sn-3Ag-0.5Cu Solder Ball

被引：2
|
作者：
Yorita, Chiko [1 ]
Kobayashi, Tatsuya [2 ]
Shohji, Ikuo [2 ]
机构：
[1] Hitachi Ltd, Prod Engn Res Lab, Totsuka Ku, 292 Yoshida Cho, Yokohama, Kanagawa 2440817, Japan
[2] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan
来源：
FRACTURE AND STRENGTH OF SOLIDS VII, PTS 1 AND 2 | 2011年 / 462-463卷
关键词：
Lead-free solder; Sn-3Ag-0.5Cu; Metallization; Cr/Cu; Cr/Ni-W; TEM;
D O I：
10.4028/www.scientific.net/KEM.462-463.849
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Semiconductor packages that use metallization and lead-free solders are increasingly being used in electronic products. In this study, interface reactions and joint-strength reliability were investigated for Sn-3W%Ag-0.5W%Cu solder ball joints joined to Cr/Cu and Cr/Ni-40W% metallization layers that were heat treated at 260 degrees C. The strength of the joint with the Cr/Cu metallization layer decreased as the duration of the heat treatment increased. Sn and Cr interface reactive layers were generated after the loss of Cu in the Cr/Cu metallization layer, but the connection was maintained. By contrast, the connection of the joint to the Cr/Ni-40W metallization layer was relatively stable under the heat treatment conditions investigated.
引用
收藏
页码：849 / +
页数：2
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