Review of Analog Neuron Devices for Hardware-based Spiking Neural Networks

被引:9
|
作者
Kwon, Dongseok [1 ]
Woo, Sung Yun [1 ]
Lee, Jong-Ho [1 ]
机构
[1] Seoul Natl Univ, Dept ECE & ISRC, Seoul 08826, South Korea
基金
新加坡国家研究基金会;
关键词
Neuron device; spiking neural network; neuron circuit; neuromorphic systems;
D O I
10.5573/JSTS.2022.22.2.115
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To process data operations more efficiently in deep neural networks (DNNs), studies on spiking neural networks (SNNs) have been conducted. In the reported literature, CMOS neuron circuits that mimic the biological behavior of an integrate-and-fire function of neurons have been mainly studied. Because conventional neuronal circuits need to be improved in terms of area and energy consumption, neuron devices with memory functions such as resistive random access memory (RRAM), phase-change random access memory (PCRAM), magnetic random access memory (MRAM), floating body FETs, and ferroelectric FETs have been emerged to replace a membrane capacitor and trigger device in the conventional neuron circuits. In this review article, neuron devices that can increase the integration density of conventional neuronal circuits and reduce power consumption are reviewed. These devices are expected to play an important role in future neuromorphic systems.
引用
收藏
页码:115 / 131
页数:17
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