Morphological study of magnetron sputtered Ti thin films on silicon substrate

被引:62
|
作者
Chawla, Vipin [1 ,2 ]
Jayaganthan, R. [1 ,2 ]
Chawla, A. K. [2 ,3 ]
Chandra, Ramesh [2 ,3 ]
机构
[1] Indian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
[2] Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, India
[3] Indian Inst Technol, Nano Sci Lab, Inst Instrumentat Ctr, Roorkee 247667, Uttar Pradesh, India
关键词
Ti thin films; magnetron sputtering; microstructural characterization; grain growth;
D O I
10.1016/j.matchemphys.2008.04.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium films on Si(100) substrate were deposited by DC-magnetron sputtering. The effect of substrate temperature on the microstructural morphologies of the films was characterized by using field emission-based scanning electron microscopy/electron back scattered difffraction (FE-SEM/EBSD) and atomic force microscopy (AFM). X-ray diffraction was used to characterize the phases and crystaillite size of the Ti films and it was observed that according to the first figure of this article: (0 0 2) orientation increases from 200 degrees C and it changes into (101) orientation from 300 degrees C. The SEM analysis of the Ti films, deposited in At atmosphere, showed two- and three-dimensional hexagonal structure of the grains at the substrate temperature of 200 degrees C and >200 degrees C, respectively. The increase in grain size of Ti films with the substrate temperature was confirmed by EBSD and AFM characterization. The average surface roughness of the Ti films has increased with increase in substrate temperature as evident from the AFM study (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:414 / 418
页数:5
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