On time-of-flight ion energy deposition into a metal target by high-intensity pulsed ion beam generated in bipolar-pulse mode

被引:7
|
作者
Xin, J. P. [1 ]
Zhu, X. P. [1 ]
Lei, M. K. [1 ]
机构
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Surface Engn Lab, Dalian 116024, Peoples R China
来源
SURFACE & COATINGS TECHNOLOGY | 2011年 / 206卷 / 05期
基金
中国国家自然科学基金;
关键词
High-intensity pulsed ion beam; Irradiation; Energy deposition; Time-of-flight effect; Subsurface heating; SURFACE; TITANIUM;
D O I
10.1016/j.surfcoat.2011.04.052
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The energy deposition of high-intensity pulsed ion beam (HIPIB) into a titanium target was studied in TEMP-6 apparatus of bipolar-pulse mode using a self-magnetic field magnetically insulated ion diode (MID), where anode plasma was pre-generated by a first negative voltage and then mixed carbon ions and proton beam was extracted during the positive stage of the bipolar pulse. According with the time-of-flight (TOF) of ions. C+ arriving at the target 14 cm downstream from the MID was delayed by 55 ns relative to H+ at a peak accelerating voltage of 250 kV and the ion energy spectrum varied greatly, starting with a Gaussian profile at exit of MID and arriving with a multi-energy complex distribution. The TOF ion energy deposition of HIPIB showed that the energy deposition proceeded firstly in a deeper depth delivered by H+ and then moved towards a top layer dominated by C+. It is found that, the contribution of H+ to the energy deposition is negligible at the beam composition of 70%C+ and 30%H+. As a result, the gradient of energy deposition profile in target is negative by C+ deposition through the whole pulse. This unique feature of HIPIB energy deposition can lead to different thermal and dynamic effects as compared to previous studies of H+-abundant HIPIB, electron or laser beam, especially limiting subsurface heating that is concerned as a major cause of droplet ejection and surface cratering and waviness formation. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:879 / 883
页数:5
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