A robust SOISRAM architecture by using advanced ABC technology for 32 nm node and beyond LSTP devices

被引：5

作者：

Hirano, Yuuichi ^{[1
]}

Tsujiuchi, Mikio ^{[1
]}

Ishikawa, Kozo ^{[2
]}

Shinohara, Hirofumi ^{[1
]}

Terada, Takashi ^{[1
]}

Maki, Yukio ^{[1
]}

Iwamatsu, Toshiaki ^{[1
]}

Eikyu, Katsumi ^{[1
]}

Uchida, Tetsuya ^{[1
]}

Obayashi, Shigeki ^{[3
]}

Nii, Koji ^{[3
]}

Tsukamoto, Yasumasa ^{[3
]}

Yabuuchi, Makoto ^{[3
]}

Ipposhi, Takashi ^{[1
]}

Oda, Hidekazu ^{[1
]}

Inoue, Yasuo ^{[1
]}

机构：

[1] Renesas Technol Corp, Adv Device Dev Dept, 4-1 Mizuhara, Itami, Hyogo 6640005, Japan

[2] Renesas Technol Corp, Renesas Semicond Engn, Itami, Hyogo 6640005, Japan

[3] Renesas Technol Corp, Adv Design Framework Dev Dept, Itami, Hyogo 6640005, Japan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents that Advanced Actively Body-bias Controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of Static Noise Margin (SNM) is successfully realized by using a body bias of load transistors while suppressing threshold-voltage variations for the first time. It is demonstrated that the write and read margins of 65nm-node SOI SRAMs are improved by the Advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.

引用

页码：78 / +

页数：2

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