Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

被引:14
|
作者
Feng, Tao [1 ,2 ]
Chen, Gong [1 ]
Han, Hainian [1 ]
Qiao, Jie [1 ]
机构
[1] Rochester Inst Technol, Chester F Carlson Ctr Imaging Sci, 54 Lomb Mem Dr, Rochester, NY 14623 USA
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, 390 Qinghe Rd, Shanghai 201800, Peoples R China
关键词
femtosecond laser ablation; silicon laser ablation; two-temperature model; Drude model; two ablation regimes; PLASMA FORMATION; CRYSTALLINE; PULSES; MECHANISMS;
D O I
10.3390/mi13010014
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectivity increased to a temporary stable state after hundreds of femtoseconds. This behavior was predicted using a temperature-dependent refractive index in the Drude model. The increase in velocity of plasma generation with increasing fluence was theoretically predicted by the Two-Temperature model. Two ablation regimes at high fluences (>0.86 J/cm(2)) were identified through the measured transient reflectivity and ablation crater profile. The simulation shows that the fluence triggering the second ablation regime produces a boiling temperature (silicon, 2628 K).
引用
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页数:10
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