Analysis of the MOSFET failure in a junction-isolated power integrated circuit

被引：3
|
作者：
Jung, Jeesung [1 ]
Huang, Alex Q. [1 ]
Li, Xuening [2 ]
机构：
[1] North Carolina State Univ, Semicond Power Elect Ctr, Raleigh, NC 27606 USA
[2] Texas Instrument, Cary, NC 27513 USA
来源：
PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年
关键词：
D O I：
10.1109/ISPSD.2007.4294979
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper analyzes a possible MOSFET failure mechanism in a Junction-Isolated Power Integrated Circuit during the diode reverse recovery. We have found that this failure is caused by the abruptly increased power density in the center of the isolated device structure.
引用
收藏
页码：249 / +
页数：3
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