A 0.6-V 10-bit 200-kS/s SAR ADC With Higher Side-Reset-and-Set Switching Scheme and Hybrid CAP-MOS DAC

被引:18
|
作者
Zhang, Hongshuai [1 ]
Zhang, Hong [1 ]
Sun, Quan [1 ]
Li, Jijun [1 ]
Liu, Xipeng [1 ]
Zhang, Ruizhi [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Shaanxi, Peoples R China
基金
美国国家科学基金会;
关键词
Analog-to-digital convertor; HSRS; energy efficient; area efficient; native MOS; hybrid DAC; low voltage; low power; successive approximation register; INPUT RANGE; 1-MS/S; CMOS;
D O I
10.1109/TCSI.2018.2853043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low-power and area efficient 10-bit SAR ADC with higher side-reset-and-set (HSRS) switching scheme and hybrid capacitive-MOS (CAP-MOS) DAC. The HSRS switching scheme consumes zero switching energy for the two most-significant bits and skips unnecessary switching without using any auxiliary circuit. It is further verified in this paper that the HSRS switching scheme shows lower nonlinearity compared with the conventional CDAC structure with the same unit capacitor size and matching condition. This additional advantage permits using DAC topologies with lower total capacitance under given linearity requirement. A hybrid CAP-MOS DAC is adopted to reduce the total capacitance of the DAC, which consumes lower static current and chip area than the conventional hybrid capacitive-resistive DAC under the same settling requirement. The prototype 10-bit SAR ADC is implemented in a 0.18-mu m CMOS technology, showing an SNDR/SFDR of 56.43 dB/71 dB at 90-kHz input, under a 0.6-V power supply, while consuming 1.01 mu W at 200 kS/s for a figure of merit of 9.32 fJ/conv.-step. The ADC occupies only a small active area of 0.0675 mm(2).
引用
收藏
页码:3639 / 3650
页数:12
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