Investigation of temperature, catalyst thickness and substrate effects in In2O3 nanostructures

被引:3
|
作者
Tuzluca, Fatma Nur [1 ,4 ]
Yesilbag, Yasar Ozkan [1 ,4 ]
Ertugrul, Mehmet [2 ,3 ,4 ]
机构
[1] Erzincan Univ, Dept Phys, TR-24100 Erzincan, Turkey
[2] Ataturk Univ, Dept Elect & Elect Engn, TR-25240 Erzurum, Turkey
[3] Ataturk Univ, Dept Nanosci & Nanoengn, TR-25240 Erzurum, Turkey
[4] Ataturk Univ, Nanosci & Nanoengn Applicat & Res Ctr, TR-25240 Erzurum, Turkey
关键词
Indium oxide; FESEM; HRTEM; Photoluminescence; Nanostructures; INDIUM OXIDE; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; CONTROLLABLE SYNTHESIS; GAS SENSORS; SOLAR-CELLS; GROWTH; NANOWIRES; NANOTUBES; MECHANISM;
D O I
10.1016/j.jpcs.2017.08.035
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This study successfully synthesized In2O3 nanotowers (NTs), nanowires (NWs), nanochains (NChs) and nano crystals (NCs) on n-type Si(100) and quartz substrates at temperature of 900-1000 degrees C by using Au catalysts via the Chemical Vapor Deposition (CVD) technique. The analyses of experimental results revealed that In2O3 nano structures (NSs) grew in different morphologies due to variable parameters, such as temperature, thickness of catalyst and substrate type. This was because these In2O3 NSs were formed by both the Vapor-Liquid-Solid (VLS) and the Vapor-Solid (VS) growth mechanisms. For instance, In2O3 NTs and NChs were formed by the VLS growth mechanism; In2O3 NCs were formed by the VS growth mechanism and In2O3 NWs were formed by both the VLS and VS growth mechanisms. Morphology and crystal structures were identified through X-Ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HRTEM), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Moreover, photoluminescence (PL) peaks of In2O3 NSs were measured to be 367 nm, 470 nm, and 630 nm at room temperature (RT). These measurement results indicated that structural, morphological, compositional and optical properties of synthesized In2O3 NSs correlated with growth parameters.
引用
收藏
页码:439 / 446
页数:8
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