Photoinduced Transmittance at 1250 nm of InAs/InGaAs Quantum Dot Based Semiconductor Optical Amplifier Measured via Waveguiding Configuration

被引：0

作者：

Jelmakas, E. ^{[1
]}

Tomasiunas, R. ^{[1
]}

Vengris, M. ^{[2
]}

Rafailov, E. ^{[3
]}

Krestnikov, I. ^{[4
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, Sauletekio 10, LT-10223 Vilnius, Lithuania

[2] Villanova Univ, Dept Quantum Elect, Vilnius, Lithuania

[3] Univ Dundee, Sch Engn Phys & Math, Dundee, Scotland

[4] Innolume GMBH, D-44263 Dortmund, Germany

来源：

2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2011年

关键词：

InGaAs quantum dots; waveguide; femtosecond;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.

引用

页数：4

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