The chemical approaches to diamond and aluminum nitride doping

Chemical and physicochemical approaches to diamond doping have been considered. For better previewing of boron and phosphorus atoms bonding in diamond lattice a method of prototype molecules was proposed. Four-coordinated compounds like, e.g. Na+[B(CH3)(4)](-) and [P(CH3)(4)]Cl-+(-) are much more close prototypes for state of boron and phosphorus in diamond lattice. In calculation of equilibrium redistribution coefficient both thermochemical (bond energy decrement) and geometrical (strain energy) factors can be concerned. The strain energy induced by substitutional phosphorus doping of diamond estimated on the base of elasticity theory is comparable with bond energy term. In AlN doping it is necessary to take into consideration the unintentional AlN doping by oxygen and, probably, hydrogen. These elements may compensate in particular acceptor centers, embarrassing the synthesis of AlN of semiconductor quality. The experimental results obtained by M.G.Spencer's team demonstrate effective doping of AlN by carbon with obtaining of p-type semiconductor.