In situ electrical impedance spectroscopy under high pressure on diamond anvil cell

被引:32
|
作者
He, Chunyuan
Gao, Chunxiao [1 ]
Ma, Yanzhang
Li, Ming
Hao, Aimin
Huang, Xiaowei
Liu, Bingguo
Zhang, Dongmei
Yu, Cuiling
Zou, Guangtian
Li, Yanchun
Li, Hui
Li, Xiaodong
Liu, Jing
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Inst Atom & Mol Phys, Changchun 130012, Peoples R China
[2] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA
[3] Chinese Acad Sci, Beijing Synchrotron Radiat Labs, Inst High Energy Phys, Beijing 100039, Peoples R China
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
D O I
10.1063/1.2778760
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of grain boundary on electrical transportation properties is a basic physical problem and also a subject of material science and technology. In situ electrical measurement of powdered materials under high pressure provides a chance to figure out the electrical properties of grain boundaries. In this letter, the authors report an in situ impedance spectroscopy method used in conjunction with a diamond anvil cell for electrical property research of grain boundaries under high pressure. Powdered CdS was pressed up to 23 GPa and an impedance arc corresponding to the grain boundary was detected. It was found that the electrical property of the grain boundary changed with pressure and could be determined by the resistance and the relaxation frequency. Pressure decreases the effective scattering section of the grain boundary to charge carriers, and finally leads to the decrease of resistance and activation energy of the grain boundary.
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页数:3
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