A method of handling float conductor boundary conditions in plasma PIC simulation

被引:0
|
作者
Wang Jiafu [1 ]
Qu Malin [1 ]
Qu Shaobo [1 ]
Wang Jing [1 ]
机构
[1] AF Engn Univ, Inst Sci, Xian 710051, Shaanxi, Peoples R China
关键词
float conductor boundary; plasma PIC simulation;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Dealing with float conductor boundary conditions involved in PIC simulation, this paper proposed a method to handle such boundary conditions. The method was applied to the simulation of discharge process in discharge cell fixed on metal object. The results show that the potential of float boundary conductor is between those of anode and cathode, and that the existence of float boundary conductor makes the plasma region collapse in areas near it.
引用
收藏
页码:5085 / 5087
页数:3
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