Voltage-Controlled Ferroelastic Switching in Pb(Zr0.2Ti0.8)O3 Thin Films

被引：47
|
作者：
Khan, Asif Islam [1 ]
Marti, Xavier [2 ,5 ]
Serrao, Claudy [1 ,2 ]
Ramesh, Ramamoorthy [2 ,3 ,4 ]
Salahuddin, Sayeef [1 ,4 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[5] Inst Phys ASCR, Vvi, Prague 16253 6, Czech Republic
来源：
NANO LETTERS | 2015年 / 15卷 / 04期
关键词：
Nanodomains; ferroelastic switching; ferroelectricity; Pb(Zr0.2Ti0.8)O-3; thin film; DOMAIN FORMATION; WALLS; CONDUCTION;
D O I：
10.1021/nl503806p
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report a voltage controlled reversible creation and annihilation of a-axis oriented similar to 10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180 degrees switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O-3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.
引用
收藏
页码：2229 / 2234
页数：6
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