Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

被引：29
|
作者：
Kodzuka, M. [1 ]
Ohkubo, T. [2 ]
Hono, K. [1 ,2 ]
Ikeda, S. [3 ,4 ]
Gan, H. D. [3 ]
Ohno, H. [3 ,4 ]
机构：
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[3] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan
[4] Tohoku Univ, Lab Nanoelect & Spintron, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期
关键词：
ROOM-TEMPERATURE;
D O I：
10.1063/1.3688039
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co25Fe75)(100-x) B-x/MgO/(Co25Fe75)(100-x)B-x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co25Fe75)(67)B-33, while good epitaxy was observed between (001) textured MgO and (Co25Fe75)(78)B-22 electrodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688039]
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页数：3
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